Wafer-SCALE 2D Inse Semiconductors Achieve Record Performance for Next-Generation Electronics

In an advancement for next-generation electronics, Researchers from the International Center for Quantum Materials at Peking University in Collability with Renmin University of Point Successfully Ferbicated Wafer-Scale Two-Dimensional Indum Selenide (Inse) Semiconductors. LED by Professor Liu Kaihui, the team developed a novel “Solid-Liquid-Solid” Growth Strategy That Overcomes Long-Standing Barriers in 2D SEMICONDUCTOR MANUFACTURING.

Published in Science Under the title “Two-Dimensional Indum Selenide Wafers for Integrated Electronics,” The study Demonstrates exceptional electronic performance, surpassing all previously reported 2D film-based devices. The fabricated inse transistors exhibit Ultra-HHGH Electron Mobility and a Near-Boltzmann-Limit Subthreshold Swing At Room Temperature, Establish a new benchmark for 2D SEMICONS

Background: Why Inse?

Indum Selenide, often referred to as a “Golden semiconductor,” offers an ideal combination of properties – Low Effective Mass, High The Thermal Velocity, and A Suitable Bandgap. Despite these advantages, its wafer-scale integration has reminded elusive due to the diesel of preachisely mainta Traditional methods have only yielded microscopic flakes, insufficient for practical electronic applications.

As moore’s law slows and silicon nears its physical limits, the semiconductor industry faces growing pressure, to identify alternative channel materials. In this context, the successful fabrication of Large-Area Crystalline Inse Wafers Represents a Pivotal Step Toward Father, More Energy-Effective, And Smaller Chips for Next-Genaness Electronic.

The in -SE SYSTEM FACES Challenges due to Multiple Phase and Extreme Vapor Pressure Differenes Between Indum and Selenium, Making it differentiain Stoichiometry During Growth. These issues hinder phase purity, crystal quality, and overall device stability.

Professor liu kaihui’s team developed a novel Solid -Liquid – Solid Convers Strategy. This process begins with the deposit of an amorphous inse thin film The wafer is then encapsulated with low-meelting-point indium and seled inside a Quartz Cavity.

When heated to approximately 550 ° C, The Indum Creates a Localized, Indum-Rich Environment that Promotes Controlled Dissolution and Recrystallization at the interface. This carefully out-of reaction results in the formation of uniform, single-paase crystalline inse films. This method produced 2-inch wafers with world-first crystallinity, phase purity, and thickness uniformity for 2D inse.

Device performance

Using these wafers, the team fabricated large-scale transistor arrays that demonstrained outstanding performance, including an Electron Mobility of Up to 287 p to 287 p to 287 p to 287 p/v. 67 MV/Dec. The devices exhibited excellent behavior at sub-10 nm gate lengths, characterized by reduced drain-induced barrier Lowering (DIBL), DIBL, Lower Operating Voltages, ENHANCED on/OFF RATIOS, And Efficient Ballistic Transport at Room Temperature.

Significantly, The devices surpassed 2037 IRDS Projections for Delay and Energy-delay Product (EDP), Positioning Inse Ahead of Silicon in Key Future Benchmarks.

This breakthrough opens a new pathway for the development of next-generation, high-pharymance, low-power chips, which are expected to be applied to be applied widely in cutting-edge facing Intelligence, Autonomous Driving, and Smart Terminals in the future. Reviewers of Science Have haled this work as “an advancement in crystal growth.”